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GB3 A1DPS 1100nm 85c Photo Switch Sensor 0.1uA Photo Sensor Light Switch
Product Details:
| Place of Origin: | Dongguan,Guangdong,China |
| Brand Name: | AMPFORT |
| Certification: | ROHS |
| Model Number: | GB3-A1DPS |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1000 Pieces |
|---|---|
| Price: | Negotiable |
| Packaging Details: | Bulk |
| Delivery Time: | 7-10 Workdays |
| Payment Terms: | T/T,Paypal, Western Union |
| Supply Ability: | 1,000,000 Pieces Per Month |
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Detail Information |
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| Features: | ROHS Complaint | Name: | Photo Sensor GB3-A1DPS |
|---|---|---|---|
| Spectral Response Range: | 850nm | Peak Sensitivity Wavelength: | 400-1100nm |
| Dark Current: | 0.1uA | Soldering Temperature: | -40~+100℃ |
| Storage Temperature: | -25~85℃ | Main Material: | Silicon,epoxy Resin |
| High Light: | GB3 A1DPS photo switch sensor,1100nm 85c photo switch sensor,0.1uA photo sensor light switch |
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Product Description
ROHS Complaint Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
■ Product Description Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
LXD/GB3-A1DPS light sensor has spectral response almost only the visible to near IR range, LXD/GB3-A1DPS offers small torelance in different color temperatures than the conventional type. LXD/GB3-A1DPS is encapsulated in a plastic package having the same shape as metal packages. The shape of LXD/GB3-A1DPS also resembles our 5R type visible sensors (CdS photoconductive cells), so LXD/GB3-A1DPS can be used as a replacement for those visible and near IR sensors.
■ Features Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
* Operation just as easy to use as a phototransistor
* Lower output-current fluctuations compared with Phototransistors and CdS photoconductive cells.
* Excellent linearity, Good linear current output over illumination
* Small torelance for light sources producing the same illuminance At different color temperatures.
* Low dark current and high photo sensitivity.
* RoHS compliant , cadmium-free alternative to photocells.
■ Applications Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
* Interior and exterior light switching (dusk/dawn switch)
* Interior and exterior light control (dimming)
* Automotive headlight dimmer
* Display contrast control
* Colorimeters
* Replacement for CdS photocells
Absolute maximum ratings / (Typ.Ta=25℃) Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
| Parameter | Symbol | Value | Unit |
| Collector-Emitter Voltage | VCEO | 12 | V |
| Emitter-Collector-Voltage | VEOC | 5 | V |
| Power Dissipation at | Pc | 70 | mW |
| Storage Temperature | Topr | -25~85 | ℃ |
| Soldering Temperature | Tstg | -40~+100 | ℃ |
Electro-Optical Characteristics (Typ.Ta=25℃) Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Spectral response range | λp | / | - | 850 | - | nm |
| Peak sensitivity wavelength | λd | / | 400 | - | 1100 | nm |
| Dark current | ID | Vdd=5V Ev=0 Lux | - | - | 0.1 | uA |
| Photocurrent | IL(1) | Vdd=5V Ev=10 Lux | 3.0 | - | 5.0 | uA |
| Vdd=5V Ev=30 Lux | 9.0 | - | 15.0 | uA | ||
| Photocurrent | IL(2)* | Vdd=5V Ev=100 Lux | 30 | 40 | 50 | uA |
| Rise time | Tr | VCE=5V IC=1mA RL=1000Ω | 15 | ms | ||
| Fall time | Tf | 15 | ||||
Spectral response Light current Vs.Ee Dark Current Vs.Temperature
■ Operating circuit example Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
■ Dimensional outlines Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS (unit:mm)
Series Specifications Of The Visible To Near IR Dector Plastic Package Photo Sensor GB3-A1DPS
| Specifi-cations (mm) | Model | Min Operational Voltage (V) | IR Rejection Capability | Light Current (uA) | Dark Current | Peak Spectral Response | ||||
| @ 10 Lux | @ 100 Lux | @ 200 Lux | @ 1000 Lux | @ 2000 Lux | @ 0 Lux | |||||
| ￠3 | LXD/GB3-A1C | 2.0 V | ||||||||
| Iss = 250uA | YES | 12.5 | 125 | 250 | - | - | < 1 nA | 520nm | ||
| ￠5 | LXD/GB5-A1C | 2.0 V | ||||||||
| Iss = 250uA | YES | 12.5 | 125 | 250 | - | - | < 1 nA | 520nm | ||
| ￠3 | LXD/GB3-A2C | 2.0 V | ||||||||
| Iss = 250uA | YES | - | 15 | - | 150 | 300 | < 1 nA | 520nm | ||
| ￠5 | LXD/GB5-A2C | 2.0 V | ||||||||
| Iss = 250uA | YES | - | 15 | - | 150 | 300 | < 1 nA | 520nm | ||
| ￠5 | LXD/GB5-A1DPF | 2.0 V | YES | 113 | 750 | - | 1318 | - | 4uA | 520nm |
| Iss = 250uA | ||||||||||
| ￠5 | LXD/GB5-A1DPB | 2.0 V | 240 | |||||||
| IC=20mA,IB=100uA | YES | 17 | 170 | - | - | < 10 nA | 850nm | |||
| ￠5 | LXD/GB5-A1DPM | 2.0 V | 600 | |||||||
| IC=20mA,IB=100uA | YES | 30 | 300 | - | - | < 10 nA | 850nm | |||